BSS138 mosfet equivalent, n-channel mosfet.
* 0.22 A, 50 V
* RDS(on) = 3.5 W @ VGS = 10 V
* RDS(on) = 6.0 W @ VGS = 4.5 V
* High Density Cell Design for Extremely Low RDS(on)
* Rugged and Reliab.
such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features
* 0.22 A, 5.
These N−Channel enhancement mode field effect transistors are
produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while provide rugged, reliable, and fast switchin.
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