BSS138
Overview
These N-Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.
- 0.22 A, 50 V
- RDS(on) = 3.5 W @ VGS = 10 V
- RDS(on) = 6.0 W @ VGS = 4.5 V
- High Density Cell Design for Extremely Low RDS(on)
- Rugged and Reliable
- Compact Industry Standard SOT-23 Surface Mount Package
- HBM Class 0A, MM Class M2 (Note 3)
- This Device is Pb-Free and Halogen Free
