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BSS138 - N-Channel MOSFET

Datasheet Summary

Description

These N

produced using onsemi’s proprietary, high cell density, DMOS technology.

state resistance while provide rugged, reliable, and fast switching performance.

Features

  • 0.22 A, 50 V.
  • RDS(on) = 3.5 W @ VGS = 10 V.
  • RDS(on) = 6.0 W @ VGS = 4.5 V.
  • High Density Cell Design for Extremely Low RDS(on).
  • Rugged and Reliable.
  • Compact Industry Standard SOT.
  • 23 Surface Mount Package.
  • HBM Class 0A, MM Class M2 (Note 3).
  • This Device is Pb.
  • Free and Halogen Free DATA SHEET www. onsemi. com D G S SOT.
  • 23.
  • 3 CASE 318.
  • 08.

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Datasheet preview – BSS138

Datasheet Details

Part number BSS138
Manufacturer ON Semiconductor
File Size 242.05 KB
Description N-Channel MOSFET
Datasheet download datasheet BSS138 Datasheet
Additional preview pages of the BSS138 datasheet.

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Full PDF Text Transcription

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N-Channel Logic Level Enhancement Mode Field Effect Transistor BSS138 General Description These N−Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features • 0.22 A, 50 V ♦ RDS(on) = 3.5 W @ VGS = 10 V ♦ RDS(on) = 6.0 W @ VGS = 4.
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